pdf n : % 56-8l jiangsu changjiang electronics technology co., ltd pdfn : % 56-8l plastic-encapsulate mosfets cjac 35n03 n-channel power mosfet description the CJAC35N03 uses advanced trench technology and design to provide excellent r ds(on) with low gate charge. it can be used in a wide variety of applications features ? high density cell design for ultra low r ds(on) ? fully characterized avalanche voltage and current ? good stability and uniformity with high e as ? excellent package for good heat dissipation ? special process technology for high esd capabilit y applications ? high side switch in pol dc/dc converter ? secondary side synchronous rectifier marking equivalent circuit CJAC35N03 = part no. solid dot=pin1 indicator xxx=date code maximum ratings ( t a =25 unless otherwise noted ) parameter symbol limit unit dra in-source voltage v ds 30 v gat e-source voltage v gs 20 v con tinuous drain current i d (1) 35 a pul sed drain current i dm 120 a sin gle pulsed avalanche energy e as (2) 150 mj pow er dissipation p d 2 w the rmal resistance from junction to ambient r ja (1) 62.5 /w junct ion temperature t j 150 sto rage temperature range t stg -55 ~+150 lea d temperature for soldering purposes(1/8 from case for 10s) t l 260 (1 ). mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt (2).e as condition: v dd =15v,l=0.1mh, r g =25?, starting t j = 25c g 1 2 3 4 56 7 8 s s s ddd d v (br) dss r ds(on) max i d 30 v ? 7m @10v ? 35 a 12m @ 4 .5 v ? www.cj-elec.com 1 a- 6 , oct ,2016
par ameter symbol test condition min typ max unit off characteristics dra in-source breakdown voltage v (br) dss v gs = 0v, i d =250a 30 v zer o gate voltage drain current i dss v ds =30v, v gs =0v 1 a gat e-body leakage current i gss v ds =0v, v gs =20v 100 na on characteristics (note1) gat e-threshold voltage v gs(th) v ds =v gs , i d =250a 1.0 1.6 3.0 v v gs = 4.5v, i d =10a 8.2 12 m? sta tic drain-source on-sate resistance r ds(on) v gs =10v, i d =12a 5.0 7.0 m? for ward transconductance g fs v ds =10v, i d =12a 30 s dyn amic characteristics (note 2) inp ut capacitance c iss 1265 out put capacitance c oss 600 rev erse transfer capacitance c rss v ds =15v,v gs =0v, f =1mhz 130 pf swi tching characteristics (note 2) tot al gate charge q g 19 gat e-source charge q gs 2.7 gat e-drain charge q gd v ds =15v, v gs =10v, i d =12a 2.5 nc tur n-on delay time t d (on) 18 tur n-on rise time t r 10 tur n-off delay time t d(off) 34 tur n-off fall time t f v dd =15v,i d =12a, v gs =10v,r g =6 10 ns dra in-source diode characteristics dra in-source diode forward voltage (note1) v sd v gs =0v, i s =12a 0.85 1.2 v con tinuous drain-source diode forward current (note3) i s 35 a pul sed drain-source diode forward current i sm 120 a not es: 1. pulse test : pulse width300s, duty cycle 2%. 2. guaranteed by design, not subject to production. 3. surface mounted on fr4 board, t 10 sec. mosfet electrical characteristics a t =25 unless otherwise specified www.cj-elec.com 2 a-6,oct,2016
0123456 0 20 40 60 80 100 120 25 50 75 100 125 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 0 200 400 600 800 1000 1200 0.01 0.1 1 10 100 3456789 1 0 0 5 10 15 20 25 30 0 2 4 6 8 101214161820 0 2 4 6 8 10 12 14 16 18 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 20 40 60 80 100 120 pulsed duration=80us duty cycle=0.5%max v dd =5v drain current i d (a) gate to source voltage v gs (v) t r ansfer ch aract eri stics t a =25 i d =250ua thr e shold voltage t hresho ld vo lt ag e v th (v) junction temperature t j ( ) 200 puls ed source current i s (a) source to drain voltage v sd (mv) v sd i s ?? t a =100 t a =25 pulsed i d =12a r ds(on) v gs on-r esist ance r ds( o n) (m ? ) gate to source voltage v gs (v) t a =100 t a =25 v gs =4.5v t a =25 pulsed on-r esist ance r ds( o n) (m ? ) drain current i d (a) i d ?? r ds(on) v gs =10v v gs = 4.0v v gs = 10v v gs = 4.5v v gs = 3.5v pulsed ou t put characteristics drain current i d (a) drain to source voltage v ds (v) v gs = 5v ty pical characteristics
3 a-6,oct,2016
symbo l dimensions in millimeters dimensions in inches min. max. min. max. a 0.900 1 .000 0.035 0 .039 a3 0.254ref. 0.010ref. d 4.944 5 .096 0.195 0 .201 e 5.974 6 .126 0.235 0 .241 d1 3.910 4 .110 0.154 0 .162 e1 3.375 3 .575 0.133 0 .141 d2 4.824 4 .976 0.190 0 .196 e2 5.674 5 .826 0.223 0 .229 k 1.190 1 .390 0.047 0 .055 b 0.350 0 .450 0.014 0 .018 e 1.270typ. 0.050typ. l 0.559 0 .711 0.022 0 .028 l1 0.424 0 .576 0.017 0 .023 h 0.574 0 .726 0.023 0 .029 10 12 10 12
4 a-6,oct,2016
5 a-6,oct,2016
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